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| N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.03 (max) Ultra High-Speed Switching SOP - 8 Package Two FET Devices built-in Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP133A1330SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.03 ( Vgs = 4.5V ) Rds (on) = 0.04 ( Vgs = 2.5V ) Rds (on) = 0.07 ( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP - 8 Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Pin Assignment PIN NUMBER 1 2 3 4 5-6 7-8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain u SOP - 8 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 +8 6 20 6 2 150 - 55 to 150 UNITS V V A A A W O 1 2 8 7 3 4 6 5 Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature C C O N - Channel MOS FET ( 2 FET devices built-in ) ( note ) : When implemented on a glass epoxy PCB Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage SYMBOL Idss Igss Vgs (off ) Rds ( on ) CONDITIONS Vds = 20 , Vgs = 0V Vgs = 8 , Vds = 0V Id = 1mA , Vds = 10V Id = 3A , Vgs = 4.5V Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Id = 3A , Vgs = 2.5V Id = 1A , Vgs = 1.5V | Yfs | Vf Id = 3A , Vds = 10V If = 6A , Vgs = 0V 0.5 0.025 0.03 0.045 20 0.85 1.1 MIN TYP MAX 10 1 Ta=25C UNITS A A V S V 1.2 0.03 0.04 0.07 Dynamic characteristics u PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 950 430 180 MAX Ta=25C UNITS pF pF pF Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 3A Vdd = 10V CONDITIONS MIN TYP 15 20 80 15 MAX Ta=25C UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS C / W Electrical Characteristics Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current u Drain/Source On-State Resistance vs. Ambient Temperature Gate/Source Cut-Off Voltage Variance vs. Ambient Temperature Electrical Characteristics Capacitance vs. Drain/Source Voltage Switching Time vs. Drain Current Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage u Standardized Transition Thermal Resistance vs. Pulse Width |
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